Infineon has unveiled the world's first 300-millimeter silicon carbide (SiC) power wafers, marking a major scaling step for wide-bandgap semiconductor manufacturing. The shift from 150mm to 300mm substrates is expected to significantly reduce costs and increase production throughput for EVs, industrial, and energy applications.
Background
Silicon carbide (SiC) is a critical material for high-power, high-efficiency semiconductors used in electric vehicles and renewable energy systems. Most SiC production historically relied on 150mm wafers; transitioning to 300mm follows the same cost-reduction trajectory seen with traditional silicon over decades.
- Source
- Hacker News (RSS)
- Published
- Nov 10, 2026 at 02:25 AM
- Score
- 8.0 / 10